Created: 2025-04-26 Sat 15:03
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Anand (1985) | Role | Wang (2001) | Comment |
---|---|---|---|
(77) \( \dot{T} = \mathbb{L} [D - D^p] - \eta \mathbb{I} \) | Elastic stress–strain–temperature relation | Not included explicitly | Elasticity assumed handled separately in FEM. |
(78)-(80) \( D^p = \dot{\gamma}^p \frac{T'}{2\tau} \) | Plastic flow rule based on deviatoric stress | \( \dot{\varepsilon}^p = A \exp\left( -\frac{Q}{RT} \right) \left[ \sinh\left( \frac{j\sigma}{s} \right) \right]^{1/m} \) | Flow scalarized: stress–strain relation based on effective stress \( \sigma \). |
(81)-(86) \( \dot{s} = h(\sigma, s, \theta) \dot{\varepsilon}^p - r(s, \theta) \) | Evolution of deformation resistance \( s \) | \( \dot{s} = h_0 \left( 1 - \frac{s}{s^*} \right)^a \dot{\varepsilon}^p \) | Hardening toward \( s^* \); no explicit static recovery \( r \) included. |
In Wang's paper and Anand's original model, \( s^* \) is given by:
\[ s^* = \hat{s} \left( \frac{\dot{\varepsilon}^p}{A} e^{Q/RT} \right)^n \]
\( s^* \) explicitly depends on strain rate ( \( \dot{\varepsilon}^p \) ) and temperature ( \( T \) ).
Values are from correspond to 60Sn40Pb solder parameters used in Anand's model:
These constants match Wang's paper for modeling 60Sn40Pb viscoplasticity.
Model Accuracy: Lines = model prediction, X = experimental data
Anand’s model smoothly captures strain-rate and temperature dependence of solder materials.
Anand's model unifies physical laws, experiment, and computation in one robust viscoplastic framework.
This flow ensures Anand’s model is thermodynamically consistent and computationally implementable.
Eq. (84):
\[
\dot{\bar{\varepsilon}}^p = g(\bar{\sigma}, s, \theta)
\]
Steady-state creep rate governed by stress and temperature.
Eq. (86):
\[
\dot{s} = h(\bar{\sigma}, s, \theta)\dot{\bar{\varepsilon}}^p - r(s, \theta)
\]
Captures transient creep via thermal recovery.
Hyperbolic Sine Flow Law:
\[
\dot{\bar{\varepsilon}}^p \propto \sinh\left(\frac{\xi \sigma}{s}\right)^{1/m}
\]
Models thermally activated dislocation motion.
Smooth rate-dependence:
Enables creep-like flow even at low stress without a sharp yield point.
Internal variable \( s \):
Represents isotropic resistance; evolves with plastic strain.
Eq. (83):
\[
\mathbf{D}^p = \dot{\bar{\varepsilon}}^p \left\{ \bar{\sigma}^{-1} \mathbf{T}^r \right\}
\]
Plastic flow direction set by stress deviator.
Eq. (85):
\[
\dot{s} = \tilde{g}(\bar{\sigma}, s, \theta)
\]
Tracks hardening-like resistance from internal variable.
No explicit yield surface:
Still captures hardening and saturation as in classical models.
Eq. (84):
\[
\dot{\bar{\varepsilon}}^p = g(\bar{\sigma}, s, \theta)
\]
Steady-state creep rate governed by stress and temperature.
Eq. (86):
\[
\dot{s} = h(\bar{\sigma}, s, \theta)\dot{\bar{\varepsilon}}^p - r(s, \theta)
\]
Captures transient creep via thermal recovery.
Hyperbolic Sine Flow Law:
\[
\dot{\bar{\varepsilon}}^p \propto \sinh\left(\frac{\xi \sigma}{s}\right)^{1/m}
\]
Models thermally activated dislocation motion.
Smooth rate-dependence:
Enables creep-like flow even at low stress without a sharp yield point.
Internal variable \( s \):
Represents isotropic resistance; evolves with plastic strain.
Eq. (83):
\[
\mathbf{D}^p = \dot{\bar{\varepsilon}}^p \left\{ \bar{\sigma}^{-1} \mathbf{T}^r \right\}
\]
Plastic flow direction set by stress deviator.
Eq. (85):
\[
\dot{s} = \tilde{g}(\bar{\sigma}, s, \theta)
\]
Tracks hardening-like resistance from internal variable.
No explicit yield surface:
Still captures hardening and saturation as in classical models.
The Anand model unifies both creep and plasticity into one smooth viscoplastic framework, enabling predictive modeling of time-dependent deformation with thermodynamic consistency and computational efficiency.